Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN7R506NH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPN7R506NH,L1Q

Manufacturer:

Package:

8-TSON Advance (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 26A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 9040

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 200µA
Base Product Number	TPN7R506
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	7.5mOhm @ 13A, 10V
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Supplier Device Package	8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)