Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN6R003NL,LQ

Toshiba Semiconductor and Storage

Product No:

TPN6R003NL,LQ

Package:

8-TSON Advance (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 30V 27A 8TSON-ADV

Quantity:

Delivery:

Payment:

In Stock : 2990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.817

    $0.817

  • 10

    $0.6707

    $6.707

  • 100

    $0.521835

    $52.1835

  • 500

    $0.442358

    $221.179

  • 1000

    $0.360344

    $360.344

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TPN6R003NL,LQ - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 200µA
Base Product Number TPN6R003
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 6mOhm @ 13.5A, 10V
Power Dissipation (Max) 700mW (Ta), 32W (Tc)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)