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TPH6R30ANL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH6R30ANL,L1Q

Package:

8-SOP Advance (5x5)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 66A/45A 8SOP

Quantity:

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TPH6R30ANL,L1Q - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 500µA
Base Product Number TPH6R30
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max) 2.5W (Ta), 54W (Tc)
Supplier Device Package 8-SOP Advance (5x5)
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 66A (Ta), 45A (Tc)