Home / Single FETs, MOSFETs / TPCC8008(TE12L,QM)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPCC8008(TE12L,QM)

Toshiba Semiconductor and Storage

Product No:

TPCC8008(TE12L,QM)

Package:

8-TSON Advance (3.3x3.3)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 25A 8TSON

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TPCC8008(TE12L,QM) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSIV
Package Cut Tape (CT)
FET Type N-Channel
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 1A
Base Product Number TPCC8008
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)