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TPCC8006-H(TE12LQM

Toshiba Semiconductor and Storage

Product No:

TPCC8006-H(TE12LQM

Package:

8-TSON Advance (3.3x3.3)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 22A 8TSON

Quantity:

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TPCC8006-H(TE12LQM - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVI-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 200µA
Base Product Number TPCC8006
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)