Home / Single FETs, MOSFETs / TPCC8002-H(TE12L,Q

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPCC8002-H(TE12L,Q

Toshiba Semiconductor and Storage

Product No:

TPCC8002-H(TE12L,Q

Package:

8-TSON Advance (3.3x3.3)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 22A 8TSON

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TPCC8002-H(TE12L,Q - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSV-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number TPCC8002
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 8.3mOhm @ 11A, 10V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)