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TP65H070G4PS

Transphorm

Product No:

TP65H070G4PS

Manufacturer:

Transphorm

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

GANFET N-CH 650V 29A TO220

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.2175

    $8.2175

  • 10

    $7.04615

    $70.4615

  • 100

    $5.87214

    $587.214

  • 500

    $5.1813

    $2590.65

  • 1000

    $4.66317

    $4663.17

  • 2000

    $4.369563

    $8739.126

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TP65H070G4PS - Product Information

Parameter Info

User Guide

Mfr Transphorm
Series SuperGaN®
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.7V @ 700µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 85mOhm @ 18A, 10V
Power Dissipation (Max) 96W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 638 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)