Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H070G4PS

Transphorm

Product No:

TP65H070G4PS

Manufacturer:

Package:

TO-220AB

Batch:

Datasheet:

Description:

GANFET N-CH 650V 29A TO220

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Transphorm
Series	SuperGaN®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4.7V @ 700µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	85mOhm @ 18A, 10V
Power Dissipation (Max)	96W (Tc)
Supplier Device Package	TO-220AB
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	638 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)