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TP65H050G4WS

Transphorm

Product No:

TP65H050G4WS

Manufacturer:

Transphorm

Package:

TO-247-3

Batch:

-

Datasheet:

-

Description:

650 V 34 A GAN FET

Quantity:

Delivery:

Payment:

In Stock : 333

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $13.642

    $13.642

  • 10

    $12.0175

    $120.175

  • 100

    $10.393285

    $1039.3285

  • 500

    $9.418927

    $4709.4635

  • 1000

    $8.639433

    $8639.433

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TP65H050G4WS - Product Information

Parameter Info

User Guide

Mfr Transphorm
Series SuperGaN®
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 700µA
Base Product Number TP65H050
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
Power Dissipation (Max) 119W (Tc)
Supplier Device Package TO-247-3
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)