Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Transphorm
Product No:
TP65H050G4WS
Manufacturer:
Package:
TO-247-3
Batch:
-
Datasheet:
-
Description:
650 V 34 A GAN FET
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$13.642
$13.642
10
$12.0175
$120.175
100
$10.393285
$1039.3285
500
$9.418927
$4709.4635
1000
$8.639433
$8639.433
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Mfr | Transphorm |
Series | SuperGaN® |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | GaNFET (Gallium Nitride) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.8V @ 700µA |
Base Product Number | TP65H050 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
Power Dissipation (Max) | 119W (Tc) |
Supplier Device Package | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |