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Tagore Technology
Product No:
TP44100SG
Manufacturer:
Package:
22-QFN (5x7)
Batch:
-
Description:
GAN FET HEMT 650V .09OHM 22QFN
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$6.27
$6.27
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Mfr | Tagore Technology |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | - |
Technology | GaNFET (Gallium Nitride) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 22-PowerVFQFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.7V @ 11mA (Typ) |
Base Product Number | TP44100 |
Operating Temperature | -55°C ~ 150°C |
Rds On (Max) @ Id, Vgs | 90mOhm @ 500mA, 6V |
Power Dissipation (Max) | - |
Supplier Device Package | 22-QFN (5x7) |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 6V |
Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |