Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK6A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK6A65D(STA4,Q,M)

Manufacturer:

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 6A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 47

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	TK6A65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	1.11Ohm @ 3A, 10V
Power Dissipation (Max)	45W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)