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TK4R4P06PL,RQ

Toshiba Semiconductor and Storage

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TK4R4P06PL,RQ

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DPAK

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Description:

MOSFET N-CHANNEL 60V 58A DPAK

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 500µA
Base Product Number	TK4R4P06
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	4.4mOhm @ 29A, 10V
Power Dissipation (Max)	87W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	48.2 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)