Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK4A65DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK4A65DA(STA4,Q,M)

Manufacturer:

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 3.5A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 1mA
Base Product Number	TK4A65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	1.9Ohm @ 1.8A, 10V
Power Dissipation (Max)	35W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)