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TK4A60DB(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK4A60DB(STA4,Q,M)

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 3.7A TO220SIS

Quantity:

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TK4A60DB(STA4,Q,M) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Obsolete
Vgs(th) (Max) @ Id 4.4V @ 1mA
Base Product Number TK4A60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)