Home / Single FETs, MOSFETs / TK40P03M1(T6RDS-Q)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK40P03M1(T6RDS-Q)

Toshiba Semiconductor and Storage

Product No:

TK40P03M1(T6RDS-Q)

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 40A DPAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TK40P03M1(T6RDS-Q) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVI-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 100µA
Base Product Number TK40P03
Operating Temperature -
Rds On (Max) @ Id, Vgs 10.8mOhm @ 20A, 10V
Power Dissipation (Max) -
Supplier Device Package DPAK
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)