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TK3R2A08QM,S4X

Toshiba Semiconductor and Storage

Product No:

TK3R2A08QM,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

UMOS10 TO-220SIS 80V 3.2MOHM

Quantity:

Delivery:

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TK3R2A08QM,S4X - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSX-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1.3mA
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 3.2mOhm @ 46A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 92A (Tc)