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TK3R1E04PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK3R1E04PL,S1X

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Package:

TO-220

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Description:

MOSFET N-CH 40V 100A TO220

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 500µA
Base Product Number	TK3R1E04
Operating Temperature	175°C (TJ)
Rds On (Max) @ Id, Vgs	3.8mOhm @ 30A, 4.5V
Power Dissipation (Max)	87W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	63.4 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)