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TK290A65Y,S4X

Toshiba Semiconductor and Storage

Product No:

TK290A65Y,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 11.5A TO220SIS

Quantity:

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TK290A65Y,S4X - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series DTMOSV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 450µA
Base Product Number TK290A65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 290mOhm @ 5.8A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)