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TK190A65Z,S4X

Toshiba Semiconductor and Storage

Product No:

TK190A65Z,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 15A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 12

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7455

    $2.7455

  • 10

    $2.28

    $22.8

  • 100

    $1.81488

    $181.488

  • 500

    $1.535675

    $767.8375

  • 1000

    $1.303001

    $1303.001

  • 2000

    $1.23785

    $2475.7

  • 5000

    $1.191319

    $5956.595

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TK190A65Z,S4X - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 610µA
Base Product Number TK190A65
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 190mOhm @ 7.5A, 10V
Power Dissipation (Max) 40W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)