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TK170V65Z,LQ

Toshiba Semiconductor and Storage

Product No:

TK170V65Z,LQ

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Package:

4-DFN-EP (8x8)

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Description:

MOSFET N-CH 650V 18A 5DFN

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Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 730µA
Base Product Number	TK170V65
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	170mOhm @ 9A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1635 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)