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Toshiba Semiconductor and Storage
Product No:
TK155E65Z,S1X
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
650V DTMOS VI TO-220 155MOHM
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.9735
$2.9735
10
$2.49755
$24.9755
100
$2.020745
$202.0745
500
$1.796184
$898.092
1000
$1.537984
$1537.984
2000
$1.44818
$2896.36
5000
$1.389375
$6946.875
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Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 730µA |
Operating Temperature | 150°C |
Rds On (Max) @ Id, Vgs | 155mOhm @ 9A, 10V |
Power Dissipation (Max) | 150W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1635 pF @ 300 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |