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TJ9A10M3,S4Q

Toshiba Semiconductor and Storage

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TJ9A10M3,S4Q

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TO-220SIS

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TJ9A10M3,S4Q

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tube
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	TJ9A10
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 10V
Power Dissipation (Max)	19W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)