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TJ8S06M3L,LXHQ

Toshiba Semiconductor and Storage

Product No:

TJ8S06M3L,LXHQ

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Package:

DPAK+

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Description:

MOSFET P-CH 60V 8A DPAK

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In Stock : 1800

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	+10V, -20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Base Product Number	TJ8S06
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	104mOhm @ 4A, 10V
Power Dissipation (Max)	27W (Tc)
Supplier Device Package	DPAK+
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)