Home / Single FETs, MOSFETs / TJ80S04M3L(T6L1,NQ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TJ80S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

Product No:

TJ80S04M3L(T6L1,NQ

Package:

DPAK+

Batch:

-

Datasheet:

Description:

MOSFET P-CH 40V 80A DPAK

Quantity:

Delivery:

Payment:

In Stock : 1748

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.1495

    $1.1495

  • 10

    $1.0279

    $10.279

  • 100

    $0.80104

    $80.104

  • 500

    $0.66177

    $330.885

  • 1000

    $0.522443

    $522.443

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TJ80S04M3L(T6L1,NQ - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +10V, -20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Base Product Number TJ80S04
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 5.2mOhm @ 40A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package DPAK+
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 7770 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)