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STU10NM65N

STMicroelectronics

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STU10NM65N

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I-PAK

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Description:

MOSFET N-CH 650V 9A IPAK

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Mfr	STMicroelectronics
Series	MDmesh™ II
Package	Tube
FET Type	N-Channel
Vgs (Max)	±25V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	STU10N
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	480mOhm @ 4.5A, 10V
Power Dissipation (Max)	90W (Tc)
Supplier Device Package	I-PAK
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)