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STD9HN65M2

STMicroelectronics

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STD9HN65M2

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DPAK

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Description:

MOSFET N-CH 650V 5.5A DPAK

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Mfr	STMicroelectronics
Series	MDmesh™ M2
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±25V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	STD9H
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	820mOhm @ 2.5A, 10V
Power Dissipation (Max)	60W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	11.5 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)