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SSM6N813R,LF

Toshiba Semiconductor and Storage

Product No:

SSM6N813R,LF

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Package:

6-TSOP-F

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Description:

SMALL SIGNAL MOSFET DUAL N-CH VD

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Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Power - Max	1.5W (Ta)
Configuration	2 N-Channel (Dual)
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Base Product Number	SSM6N813
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	112mOhm @ 3.5A, 10V
Supplier Device Package	6-TSOP-F
Gate Charge (Qg) (Max) @ Vgs	3.6nC @ 4.5V
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	242pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)