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SSM6J215FE(TE85L,F

Toshiba Semiconductor and Storage

Product No:

SSM6J215FE(TE85L,F

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Package:

ES6

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Description:

MOSFET P CH 20V 3.4A ES6

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6J215
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	59mOhm @ 3A, 4.5V
Power Dissipation (Max)	500mW (Ta)
Supplier Device Package	ES6
Gate Charge (Qg) (Max) @ Vgs	10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)