Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SSM6J213FE(TE85L,F

Toshiba Semiconductor and Storage

Product No:

SSM6J213FE(TE85L,F

Manufacturer:

Package:

ES6

Batch:

Datasheet:

Description:

MOSFET P CH 20V 2.6A ES6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6J213
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	103mOhm @ 1.5A, 4.5V
Power Dissipation (Max)	500mW (Ta)
Supplier Device Package	ES6
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)