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SSM5H08TU,LF

Toshiba Semiconductor and Storage

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SSM5H08TU,LF

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Package:

UFV

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Description:

MOSFET N-CH 20V 1.5A UFV

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIII
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
FET Feature	Schottky Diode (Isolated)
Mounting Type	Surface Mount
Package / Case	6-SMD (5 Leads), Flat Lead
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 100µA
Base Product Number	SSM5H08
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	160mOhm @ 750mA, 4V
Power Dissipation (Max)	500mW (Ta)
Supplier Device Package	UFV
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)