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SSM3K2615TU,LF

Toshiba Semiconductor and Storage

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SSM3K2615TU,LF

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Package:

UFM

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Description:

MOSFET N-CH 60V 2A UFM

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Mfr	Toshiba Semiconductor and Storage
Series	π-MOSV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Base Product Number	SSM3K2615
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	300mOhm @ 1A, 10V
Power Dissipation (Max)	800mW (Ta)
Supplier Device Package	UFM
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 10V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)