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SSM3J15FV,L3F

Toshiba Semiconductor and Storage

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SSM3J15FV,L3F

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Package:

VESM

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Description:

MOSFET P-CH 30V 100MA VESM

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Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-723
Product Status	Active
Vgs(th) (Max) @ Id	1.7V @ 100µA
Base Product Number	SSM3J15
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	12Ohm @ 10mA, 4V
Power Dissipation (Max)	150mW (Ta)
Supplier Device Package	VESM
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	9.1 pF @ 3 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)