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SQUN700E-T1_GE3

Vishay Siliconix

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SQUN700E-T1_GE3

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Die

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Description:

40-V N- & P-CH COMMON DRAIN + 20

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Mfr	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Power - Max	50W (Tc), 48W (Tc)
Configuration	2 N-Channel (Dual), P-Channel
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA, 2.5V @ 250µA
Base Product Number	SQUN700
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Supplier Device Package	Die
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Drain to Source Voltage (Vdss)	200V, 40V
Input Capacitance (Ciss) (Max) @ Vds	1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Current - Continuous Drain (Id) @ 25°C	16A (Tc), 30A (Tc)