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SQM120N10-3M8_GE3

Vishay Siliconix

Product No:

SQM120N10-3M8_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 120A TO263

Quantity:

Delivery:

Payment:

In Stock : 335

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.5055

    $3.5055

  • 10

    $2.945

    $29.45

  • 100

    $2.382315

    $238.2315

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SQM120N10-3M8_GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Base Product Number SQM120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Power Dissipation (Max) 375W (Tc)
Supplier Device Package TO-263 (D²Pak)
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)