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SPD30N03S2L10GBTMA1

Infineon Technologies

Product No:

SPD30N03S2L10GBTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 30A TO252-3

Quantity:

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SPD30N03S2L10GBTMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 50µA
Base Product Number SPD30N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 10mOhm @ 30A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 41.8 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)