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SIZ200DT-T1-GE3

Vishay Siliconix

Product No:

SIZ200DT-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-PowerPair® (3.3x3.3)

Batch:

-

Datasheet:

Description:

MOSFET N-CH DUAL 30V

Quantity:

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Payment:

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SIZ200DT-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 4.3W (Ta), 33W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Base Product Number SIZ200
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Supplier Device Package 8-PowerPair® (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V, 30nC @ 10V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V, 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)