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SISS66DN-T1-GE3

Vishay Siliconix

Product No:

SISS66DN-T1-GE3

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PowerPAK® 1212-8S

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Description:

MOSFET N-CH 30V 49.1/178.3A PPAK

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+20V, -16V
Technology	MOSFET (Metal Oxide)
FET Feature	Schottky Diode (Body)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	SISS66
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.38mOhm @ 20A, 10V
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Supplier Device Package	PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs	85.5 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	3327 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	49.1A (Ta), 178.3A (Tc)