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SISS65DN-T1-GE3

Vishay Siliconix

Product No:

SISS65DN-T1-GE3

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Package:

PowerPAK® 1212-8S

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Description:

MOSFET P-CH 30V 25.9A/94A PPAK

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen III
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 250µA
Base Product Number	SISS65
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	4.6mOhm @ 15A, 10V
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Supplier Device Package	PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs	138 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	4930 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	25.9A (Ta), 94A (Tc)