Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS61DN-T1-GE3

Vishay Siliconix

Product No:

SISS61DN-T1-GE3

Manufacturer:

Package:

PowerPAK® 1212-8S

Batch:

Datasheet:

Description:

MOSFET P-CH 20V 30.9/111.9A PPAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Vishay Siliconix
Series	TrenchFET® Gen III
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Base Product Number	SISS61
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	3.5mOhm @ 15A, 4.5V
Power Dissipation (Max)	5W (Ta), 65.8W (Tc)
Supplier Device Package	PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs	231 nC @ 10 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	8740 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	30.9A (Ta), 111.9A (Tc)