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SISS52DN-T1-GE3

Vishay Siliconix

Product No:

SISS52DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 47.1A/162A PPAK

Quantity:

Delivery:

Payment:

In Stock : 23697

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.969

    $0.969

  • 10

    $0.7923

    $7.923

  • 100

    $0.61655

    $61.655

  • 500

    $0.522614

    $261.307

  • 1000

    $0.425733

    $425.733

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SISS52DN-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET® Gen V
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +16V, -12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8SH
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Base Product Number SISS52
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Supplier Device Package PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 47.1A (Ta), 162A (Tc)