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SISS5110DN-T1-GE3

Vishay Siliconix

Product No:

SISS5110DN-T1-GE3

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PowerPAK® 1212-8S

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Description:

N-CHANNEL 100 V (D-S) MOSFET POW

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±25V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SISS5110
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	8.9mOhm @ 10A, 10V
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Supplier Device Package	PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	13.4A (Ta), 46.4A (Tc)