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SISS26LDN-T1-GE3

Vishay Siliconix

Product No:

SISS26LDN-T1-GE3

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Package:

PowerPAK® 1212-8S

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Description:

MOSFET N-CH 60V 23.7A/81.2A PPAK

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	SISS26
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	4.3mOhm @ 15A, 10V
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Supplier Device Package	PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	1980 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	23.7A (Ta), 81.2A (Tc)