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SISH410DN-T1-GE3

Vishay Siliconix

Product No:

SISH410DN-T1-GE3

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Package:

PowerPAK® 1212-8SH

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Description:

MOSFET N-CH 20V 22A/35A PPAK

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8SH
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	SISH410
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Supplier Device Package	PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 35A (Tc)