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SISH112DN-T1-GE3

Vishay Siliconix

Product No:

SISH112DN-T1-GE3

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Package:

PowerPAK® 1212-8SH

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Description:

MOSFET N-CH 30V 11.3A PPAK

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8SH
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Base Product Number	SISH112
Operating Temperature	-50°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	7.5mOhm @ 17.8A, 10V
Power Dissipation (Max)	1.5W (Tc)
Supplier Device Package	PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 4.5 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	2610 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)