Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISH110DN-T1-GE3

Vishay Siliconix

Product No:

SISH110DN-T1-GE3

Manufacturer:

Package:

PowerPAK® 1212-8SH

Batch:

Datasheet:

Description:

MOSFET N-CH 20V 13.5A PPAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Vishay Siliconix
Series	TrenchFET® Gen II
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8SH
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	SISH110
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	5.3mOhm @ 21.1A, 10V
Power Dissipation (Max)	1.5W (Ta)
Supplier Device Package	PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	13.5A (Ta)