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SISD5300DN-T1-GE3

Vishay Siliconix

Product No:

SISD5300DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-F

Batch:

-

Datasheet:

Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

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Payment:

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SISD5300DN-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +16V, -12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-F
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 0.87mOhm @ 15A, 10V
Power Dissipation (Max) 5.4W (Ta), 57W (Tc)
Supplier Device Package PowerPAK® 1212-F
Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 5030 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 62A (Ta), 198A (Tc)