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SIS890ADN-T1-GE3

Vishay Siliconix

Product No:

SIS890ADN-T1-GE3

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Package:

PowerPAK® 1212-8

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Description:

MOSFET N-CH 100V 7.6A/24.7A PPAK

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Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	SIS890
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	25.5mOhm @ 10A, 10V
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Supplier Device Package	PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C	7.6A (Ta), 24.7A (Tc)