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SIS606BDN-T1-GE3

Vishay Siliconix

Product No:

SIS606BDN-T1-GE3

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Package:

PowerPAK® 1212-8

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Description:

MOSFET N-CH 100V 9.4A/35.3A PPAK

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In Stock : 3000

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIS606
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	17.4mOhm @ 10A, 10V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Supplier Device Package	PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1470 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 35.3A (Tc)