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SIS110DN-T1-GE3

Vishay Siliconix

Product No:

SIS110DN-T1-GE3

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Package:

PowerPAK® 1212-8

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Description:

MOSFET N-CH 100V 5.2A/14.2A PPAK

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIS110
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	54mOhm @ 4A, 10V
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Supplier Device Package	PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5.2A (Ta), 14.2A (Tc)