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SIR5211DP-T1-GE3

Vishay Siliconix

Product No:

SIR5211DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

Description:

P-CHANNEL 20 V (D-S) MOSFET POWE

Quantity:

Delivery:

Payment:

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SIR5211DP-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.2mOhm @ 10A, 10V
Power Dissipation (Max) 5W (Ta), 56.8W (Tc)
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 6700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C 31.2A (Ta), 105A (Tc)