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SIR510DP-T1-RE3

Vishay Siliconix

Product No:

SIR510DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

Description:

N-CHANNEL 100 V (D-S) MOSFET POW

Quantity:

Delivery:

Payment:

In Stock : 2751

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.052

    $2.052

  • 10

    $1.7043

    $17.043

  • 100

    $1.356505

    $135.6505

  • 500

    $1.147809

    $573.9045

  • 1000

    $0.973892

    $973.892

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SIR510DP-T1-RE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET® Gen V
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 4980 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 126A (Tc)